ds30099 rev. 4p-1 1 of 3 2N7002W new product 2N7002W n-channel enhancement mode field effect transistor features low on-resistance low gate threshold voltage low input capacitance fast switching speed low input/output leakage ultra-small surface mount package maximum ratings @ t a = 25c unless otherwise specified characteristic symbol 2N7002W units drain-source voltage v dss 60 v drain-gate voltage r gs 1.0m w v dgr 60 v gate-source voltage continuous pulsed v gss 20 40 v drain current (note 1) continuous continuous @ 100c pulsed i d 115 73 800 ma total power dissipation (note 1) derating above t a = 25c p d 200 1.60 mw mw/c thermal resistance, junction to ambient r q ja 625 k/w operating and storage temperature range t j ,t stg -55 to +150 c note: 1. valid provided that terminals are kept at specified ambient temperature. 2. pulse width 300 m s, duty cycle 2%. a e j l m b c h g d k top view d s g mechanical data case: sot-323, molded plastic terminals: solderable per mil-std-202, method 208 terminal connections: see diagram marking: k72 weight: 0.006 grams (approx.) sot-323 dim min max a 0.30 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 all dimensions in mm power semiconductor
ds30099 rev. 4p-1 2 of 3 2N7002W new product electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 2) drain-source breakdown voltage bv dss 60 70 ? v v gs = 0v, i d = 10 m a zero gate voltage drain current @ t c = 25c @ t c = 125c i dss ?? 1.0 500 a v ds = 60v, v gs = 0v gate-body leakage i gss ?? 10 na v gs = 20v, v ds = 0v on characteristics (note 2) gate threshold voltage v gs(th) 1.0 ? 2.0 v v ds =v gs , i d =-250 m a static drain-source on-resistance @ t j = 25c @t j = 125c r ds (on) ? 3.2 4.4 7.5 13.5 w v gs = 5.0v, i d = 0.05a v gs = 10v, i d = 0.5a on-state drain current i d(on) 0.5 1.0 ? a v gs = 10v, v ds = 7.5v forward transconductance g fs 80 ?? ms v ds =10v, i d = 0.2a dynamic characteristics input capacitance c iss ? 22 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? 11 25 pf reverse transfer capacitance c rss ? 2.0 5.0 pf switching characteristics turn-on delay time t d(on) ? 7.0 20 ns v dd = 30v, i d = 0.2a, r l = 150 w ,v gen = 10v, r gen = 25 w turn-off delay time t d(off) ? 11 20 ns note: 1. valid provided that terminals are kept at specified ambient temperature. 2. pulse width 300 m s, duty cycle 2%.
ds30099 rev. 4p-1 3 of 3 2N7002W new product 0 0.2 0.4 0.6 0.8 1.0 01 2 3 4 5 i , drain-source current (a) d v , drain-source voltage (v) fig. 1 on-region characteristics ds v = 10v 9.0v 8.0v 7.0v 6.5v 6.0v 5.0v 4.5v 4.0v 3.5v 3.0v 2.5v 2.0/1.0v gs 5.5v 5.0v 0 1 2 3 4 5 0 0.2 r , normalized drain-source on-resist ance ds(on) i , drain current (a) fig. 2 on-resistance vs drain current d v = 5.0v gs t=25c j v = 10v gs 6 7 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 -55 -30 -5 20 45 70 95 120 145 r , normalized drain-source on-resist ance ds(on) t , junction temperature ( c) fig. 3 on-resistance vs junction temperature j v = 10v, i gs d = 0.5a v = 5.0v, i gs d = 0.05a 0 v , gate to source voltage (v) fig. 4 on-resistance vs. gate-source voltage gs i = 50ma d i = 500ma d 1 2 3 4 5 6 0 2 4 6 8 1012141618 r , normalized drain-source on-resist ance ds(on)
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